PN間に電気抵抗の大きな半導体層をはさみ少数キャリア蓄積効果を大きくし逆回復時間を長くしたものである。順方向バイアス時に高周波交流を通過させる性質があることを利用し、空中線のバンド切り替えなど高周波スイッチングに用いられる。pn接合で順方向電圧から逆方向に電圧の極性が変化するとき、注入によってn領域に蓄積されるホールの一部がp領域に逆流して、ある時間（蓄積時間）だけ大きいパルス電流を流す。pn層に挟まれたi層が、この蓄積時間を短くするために働く。
| 型番 | メーカ名 | 商品説明 |
|---|---|---|
| IRF7807D1 | International Rectifier | |
| IRF7807D2 | International Rectifier | |
| IRF7807VD1 | International Rectifier | |
| IRF7807VD2 | International Rectifier | |
| 1N6264 | Optoelectronics | |
| 71061 | Vishay Siliconix | |
| BAT54C-7 | Diodes Incorporated | |
| BAT54CDW | Diodes Incorporated | |
| BAT54CDW-7 | Diodes Incorporated | |
| BAT54CFILM | STMicroelectronics | |
| BAT54CSM | Seme | |
| BAT54C-T1 | Won-Top Electronics | |
| BAT54C-T3 | Won-Top Electronics | |
| BAT54CW-T1 | Won-Top Electronics | |
| BAT54CW-T3 | Won-Top Electronics | |
| BAT54RCLT1 | Zowie Technology Corporation | |
| TLP722 | Toshiba Semiconductor | |
| CD5356B | Compensated Deuices Incorporated | |
| CMZ5356B | Central Semiconductor Corp | |
| DS1104SG27 | Dynex Semiconductor | |
| TR1104SG27 | TRSYS | |
| DS1107SG37 | Dynex Semiconductor | |
| TR1107SG37 | TRSYS | |
| DS1109SG47 | Dynex Semiconductor | |
| DS1112SG57 | Dynex Semiconductor | |
| SG5768 | Microsemi Corporation | |
| SG5770 | Microsemi Corporation | |
| SG5772 | Microsemi Corporation | |
| SG5774 | Microsemi Corporation | |
| SG5774F | Microsemi Corporation | |
| BUPD1520 | Power Innovations Limited | |
| LMH6533 | National Semiconductor | |
| LMH6533SP | National Semiconductor | |
| LMH6533SPX | National Semiconductor | |
| CM521613 | Powerex Power Semiconductors | |
| DF25216 | Dynex Semiconductor | |
| DF45216 | Dynex Semiconductor | |
| CD471290 | Powerex Power Semiconductors | |
| CD471290A | Powerex Power Semiconductors | |
| IMN10 | Rohm | |
| IMP11 | Rohm | |
| 1SV232 | Toshiba Semiconductor | |
| HGT4E20N60A4DS | Fairchild Semiconductor | |
| HGTG20N60A4D | Fairchild Semiconductor | |
| HGTG20N60B3D | Fairchild Semiconductor | |
| HGTG20N60C3D | Fairchild Semiconductor | |
| MGW20N60D | Motorola, | |
| SKW20N60 | Infineon Technologies | |
| 1SV239 | Toshiba Semiconductor | |
| 1SS309 | Toshiba Semiconductor | |
| 1SS301 | Toshiba Semiconductor | |
| 1SV228 | Toshiba Semiconductor | |
| 1SS226 | Toshiba Semiconductor | |
| 1SS181 | Toshiba Semiconductor | |
| 1SS193 | Toshiba Semiconductor | |
| 1SS184 | Toshiba Semiconductor | |
| 1SS300 | Toshiba Semiconductor | |
| 1SS352 | Toshiba Semiconductor | |
| 1SV160 | Toshiba Semiconductor | |
| 1SV285 | Toshiba Semiconductor | |
| MLL957B | Microsemi Corporation | |
| CMZ5953B | Central Semiconductor Corp | |
| BAS125-07 | Siemens Semiconductor Group | |
| BAS125-07W | Siemens Semiconductor Group | |
| BA892 | Philips Semiconductors | |
| BA892-02L | Infineon Technologies | |
| BA892-02V | Infineon Technologies | |
| BAS40-02L | Infineon Technologies | |
| BAS40-02V | Vishay Siliconix | |
| BAS40-02V-GS08 | Vishay Siliconix | |
| BAS40-02V-GS18 | Vishay Siliconix | |
| BAS40-06HT1 | Leshan Radio Company | |
| BAS40-06LT1 | Semiconductor | |
| BAS40-07W | Siemens Semiconductor Group | |
| BAS40BRW | Diodes Incorporated | |
| BAS40DW-04 | Diodes Incorporated | |
| BAS40DW-05 | Diodes Incorporated | |
| BAS40DW-06 | Diodes Incorporated | |
| BAS40L | Philips Semiconductors | |
| BAS40-T1 | Siemens Semiconductor Group |